? semiconductor components industries, llc, 2010 january, 2010 ? rev. 2 1 publication order number: mbr20l45ct/d MBR20L45CTG, mbrf20l45ctg switchmode ? power rectifier 45 v, 20 a features and benefits ? low forward voltage ? low power loss/high efficiency ? high surge capacity ? 150 c operating junction temperature ? 20 a total (10 a per diode leg) ? guard ? ring for stress protection applications ? power supply ? output rectification ? power management ? instrumentation mechanical characteristics: ? case: epoxy, molded ? epoxy meets ul 94 v ? 0 @ 0.125 in ? weight (approximately): 1.9 grams ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? shipped 50 units per plastic tube ? this is a pb ? free device* maximum ratings please see the table on the following page *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. dual schottky barrier rectifiers 20 amperes, 45 volts 1 3 2, 4 http://onsemi.com device package shipping ordering information marking diagrams b20l45 = device code a = assembly location y = year ww = work week aka = polarity designator g = pb ? free device mbrf20l45ctg to ? 220fp (pb ? free) 50 units/rail to ? 220 case 221a plastic 3 1 2 4 ayww b20l45g a k a to ? 220 case 221d style 3 b20l45g yww MBR20L45CTG to ? 220 (pb ? free) 50 units/rail
MBR20L45CTG, mbrf20l45ctg http://onsemi.com 2 maximum ratings (per diode leg) rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 45 v average rectified forward current (rated v r ) t c = 141 c i f(av) 10 a peak repetitive forward current (rated v r , square wave, 20 khz) i frm 20 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 180 a operating junction temperature (note 1) t j ? 55 to +150 c storage temperature t stg 55 to +175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s esd ratings: machine model = c human body model = 3b > 400 > 8000 v thermal characteristics maximum thermal resistance (MBR20L45CTG) junction ? to ? case junction ? to ? ambient (mbrf20l45ctg) junction ? to ? case r jc r ja r jc 1.9 45 2.2 c/w electrical characteristics (per diode leg) maximum instantaneous forward voltage (note 2) (i f = 10 a, t c = 25 c) (i f = 10 a, t c = 125 c) (i f = 20 a, t c = 25 c) (i f = 20 a, t c = 125 c) v f 0.50 0.47 0.63 0.62 v maximum instantaneous reverse current (note 2) (rated dc voltage, t c = 25 c) (rated dc voltage, t c = 125 c) i r 0.5 170 ma stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . 2. pulse test: pulse width = 300 s, duty cycle 2.0%.
MBR20L45CTG, mbrf20l45ctg http://onsemi.com 3 typical characteristics figure 1. typical forward voltage figure 2. maximum forward voltage v f , instantaneous forward voltage (v) 0.9 0.7 0.6 0.5 0.3 0.2 0.1 0 0.1 1 10 figure 3. typical reverse current figure 4. maximum reverse current v r , reverse voltage (v) 50 35 30 25 15 10 5 0 1e ? 06 1e ? 04 1e ? 03 1e ? 02 1e ? 01 1e+00 figure 5. current derating t c , case temperature ( c) 155 145 140 125 120 110 105 100 0 5 15 20 i f , instantaneous forward current (a) i r , reverse current (a) i f , average forward current (a) 0.4 100 150 c 125 c 25 c 150 c 125 c 25 c 20 40 45 130 115 135 10 square wave dc 0.8 75 c v f , maximum forward voltage (v) 0.9 0.7 0.6 0.5 0.3 0.2 0.1 0 0.1 1 10 i f , instantaneous forward current (a) 0.4 100 150 c 125 c 25 c 0.8 75 c 1e ? 05 75 c v r , reverse voltage (v) 50 35 30 25 15 10 5 0 1e ? 06 1e ? 04 1e ? 03 1e ? 02 1e ? 01 1e+00 i r , reverse current (a) 150 c 125 c 25 c 20 40 45 1e ? 05 75 c 150
MBR20L45CTG, mbrf20l45ctg http://onsemi.com 4 typical characteristics figure 6. forward power dissipation figure 7. typical capacitance i o , average forward current (a) v r , reverse voltage (v) 15 10 5 0 0 4 8 40 35 25 20 15 10 5 0 100 1000 10000 p fo , average power dissipation (w) c, capacitance (pf) 20 square wave 45 12 16 dc 2 6 10 14 18 30 r(t), transient thermal resistance figure 8. thermal response junction ? to ? ambient for MBR20L45CTG 1000 0.1 0.00001 t 1 , time (sec) 1 0.0001 0.001 0.01 1 10 100 0.000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t), transient thermal resistance figure 9. thermal response junction ? to ? case for MBR20L45CTG 1000 0.1 0.00001 t 1 , time (sec) 10 0.01 0.0001 0.001 0.01 1 10 100 0.000001 0.1 1 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.01
MBR20L45CTG, mbrf20l45ctg http://onsemi.com 5 r(t), transient thermal resistance figure 10. thermal response junction ? to ? case for mbrf20l45ctg 1000 0.1 0.00001 t 1 , time (sec) 0.1 0.0001 0.001 0.01 1 10 100 0.000001 0.01 1 10 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.001
MBR20L45CTG, mbrf20l45ctg http://onsemi.com 6 package dimensions to ? 220 case 221a ? 09 issue af notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j to ? 220 fullpak case 221d ? 03 issue k dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y style 3: pin 1. anode 2. cathode 3. anode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mbr20l45ct/d switchmode is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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